STW9NK90Z
High-power N-channel MOSFETs in TO-247 package for robust applications
Manufacturer： stm
series introduction
# Introduction to the STW9NK90Z Product Series
## 1. Overview
The STW9NK90Z product series represents a cutting - edge line of power MOSFETs (Metal - Oxide - Semiconductor Field - Effect Transistors) developed by STMicroelectronics. These MOSFETs are designed to meet the demanding requirements of a wide range of power electronics applications, offering high performance, reliability, and efficiency.
## 2. Key Features
### 2.1 High Voltage Capability
The STW9NK90Z series is rated for a high drain - source voltage (VDS) of up to 900V. This high - voltage rating makes them suitable for applications where high - voltage switching is required, such as in switch - mode power supplies (SMPS), high - intensity discharge (HID) lamp ballasts, and industrial motor drives. The ability to handle high voltages ensures that the MOSFETs can operate safely in harsh electrical environments without the risk of breakdown.
### 2.2 Low On - Resistance (RDS(on))
One of the most significant features of the STW9NK90Z series is its low on - resistance. With a typical RDS(on) value in the range of a few ohms, these MOSFETs minimize power losses during conduction. Low on - resistance means less heat generation, which in turn improves the overall efficiency of the power circuit. This is particularly important in high - power applications where energy efficiency is a key concern, as it can lead to reduced operating costs and longer device lifetimes.
### 2.3 Fast Switching Speed
The MOSFETs in the STW9NK90Z series are designed to have fast switching times. Fast turn - on and turn - off times allow for high - frequency operation, which is essential in modern power electronics applications. High - frequency switching enables the use of smaller passive components such as inductors and capacitors, reducing the size and cost of the overall power supply or circuit. Additionally, fast switching helps to minimize switching losses, further improving the efficiency of the system.
### 2.4 Avalanche Energy Rating
The STW9NK90Z series has a high avalanche energy rating (EAS). Avalanche breakdown can occur when the MOSFET is subjected to high - voltage spikes or transient events. A high avalanche energy rating ensures that the MOSFET can withstand these events without being damaged, providing robustness and reliability in real - world applications. This is especially important in applications where there are sudden changes in load or voltage, such as in automotive electronics and industrial power systems.
### 2.5 Low Gate Charge (Qg)
The low gate charge of the STW9NK90Z MOSFETs reduces the power required to drive the gate. This results in lower gate - drive losses and allows for the use of simpler and more cost - effective gate - drive circuits. A lower gate charge also enables faster switching transitions, contributing to the overall high - speed performance of the MOSFET.
## 3. Package and Thermal Performance
### 3.1 Package Options
The STW9NK90Z series is available in a variety of industry - standard packages, such as the TO - 220 and TO - 247. These packages offer good thermal dissipation characteristics and are easy to mount on printed circuit boards (PCBs). The TO - 220 package is a popular choice for medium - power applications, while the TO - 247 package is suitable for high - power applications where better thermal management is required.
### 3.2 Thermal Resistance
The MOSFETs in the STW9NK90Z series have relatively low thermal resistance values. Low thermal resistance allows for efficient heat transfer from the device to the heat sink or the surrounding environment. This helps to keep
Images for reference
TO-247-3
Image Preview
Image Preview