STW20NM60
N-channel MOSFETs, 600V 20A, TO-247 package for power applications
Manufacturer： ['stm', 'iscsemi']
series introduction
# Introduction to the STW20NM60 Product Series
## 1. Overview
The STW20NM60 product series is a remarkable line of power MOSFETs (Metal - Oxide - Semiconductor Field - Effect Transistors) developed by STMicroelectronics, a global leader in semiconductor solutions. These MOSFETs are designed to meet the demanding requirements of a wide range of power electronics applications, offering high performance, reliability, and efficiency.
## 2. Key Features
### 2.1 Electrical Characteristics
- **Voltage Rating**: The STW20NM60 series is rated for a drain - source voltage ($V_{DS}$) of 600V. This high voltage rating makes it suitable for applications that require handling relatively high - voltage power supplies, such as switch - mode power supplies (SMPS), motor control, and lighting ballasts.
- **Current Handling Capability**: With a continuous drain current ($I_D$) rating of up to 20A, these MOSFETs can handle significant amounts of current. This allows them to be used in high - power applications where large currents need to be switched or controlled.
- **Low On - Resistance ($R_{DS(on)}$)**: One of the most important features of the STW20NM60 series is its low on - resistance. The typical on - resistance values are in the range of a few tens of milliohms. A low $R_{DS(on)}$ results in lower power dissipation when the MOSFET is in the on - state, which in turn improves the overall efficiency of the circuit and reduces heat generation. This is crucial for applications where energy efficiency is a priority, such as in green energy systems and battery - powered devices.
### 2.2 Thermal Performance
- **Good Thermal Conductivity**: The MOSFETs in the STW20NM60 series are designed with a package that provides good thermal conductivity. This enables efficient heat transfer from the device to the heat sink or the surrounding environment. As a result, the MOSFET can operate at higher power levels without overheating, ensuring reliable performance even under demanding conditions.
- **Thermal Protection**: Some variants in the series may incorporate built - in thermal protection features. These features can detect excessive temperatures and take appropriate action, such as reducing the current flow or shutting down the device, to prevent damage due to overheating.
### 2.3 Gate Drive Requirements
- **Low Gate Charge ($Q_g$)**: The STW20NM60 series has a relatively low gate charge. This means that less energy is required to charge and discharge the gate capacitance of the MOSFET, resulting in faster switching times. Faster switching times reduce switching losses and improve the overall efficiency of the power conversion process.
- **Gate Threshold Voltage ($V_{GS(th)}$)**: The gate threshold voltage is well - defined and typically in the range of a few volts. This allows for easy control of the MOSFET using standard logic - level signals, simplifying the design of the gate drive circuit.
## 3. Package Options
The STW20NM60 series is available in various package types, each with its own advantages and suitable applications:
- **TO - 220 Package**: This is a popular through - hole package that offers good mechanical stability and easy mounting on printed circuit boards (PCBs). It is suitable for applications where high - power dissipation is required and where the PCB layout allows for through - hole components.
- **D2PAK Package**: The D2PAK is a surface - mount package that provides a compact form factor and good thermal performance. It is ideal for applications where space is limited, such as in portable devices and small - sized power supplies.
## 4. Applications
### 4.
Images for reference
TO-247-3
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