STB75NF75LT4
N-channel MOSFET transistors, 75V 75A, D2PAK/TO263-3 package
Manufacturer： stm
series introduction
# Introduction to the STB75NF75LT4 Product Series
## 1. Overview
The STB75NF75LT4 product series is a remarkable offering in the field of power semiconductor devices. These devices are designed to meet the demanding requirements of various power - related applications, providing high - performance solutions with a focus on efficiency, reliability, and robustness.
## 2. Key Features
### 2.1 Low On - Resistance
One of the standout features of the STB75NF75LT4 series is its extremely low on - resistance (\(R_{DS(on)}\)). Low on - resistance is crucial as it directly impacts power dissipation. When the device is in the on - state, a lower \(R_{DS(on)}\) means less power is wasted as heat. This not only improves the overall efficiency of the system but also reduces the need for complex and bulky heat - dissipation mechanisms. For example, in high - current applications, the low \(R_{DS(on)}\) helps to minimize power losses, resulting in energy savings and a more cost - effective operation.
### 2.2 High Current - Handling Capability
These devices are capable of handling high currents. This makes them suitable for applications where large amounts of power need to be switched or controlled. Whether it's in automotive power systems, industrial motor drives, or high - power DC - DC converters, the ability to handle high currents ensures that the STB75NF75LT4 series can meet the power demands of these applications without overheating or experiencing performance degradation.
### 2.3 Fast Switching Speed
The fast switching speed of the STB75NF75LT4 series is another significant advantage. In power electronics, fast switching allows for higher - frequency operation. Higher - frequency operation can lead to smaller and more compact power supplies, as passive components such as inductors and capacitors can be reduced in size. Additionally, fast switching helps to minimize switching losses, further improving the overall efficiency of the system.
### 2.4 Avalanche Energy Rating
The series has a high avalanche energy rating. Avalanche breakdown can occur in power MOSFETs when there is a sudden increase in voltage across the device. A high avalanche energy rating means that the device can withstand these transient over - voltage conditions without being damaged. This is particularly important in applications where there are voltage spikes or surges, such as in automotive electrical systems or in power supplies connected to unstable power grids.
## 3. Technical Specifications
### 3.1 Voltage and Current Ratings
- **Drain - Source Voltage (\(V_{DSS}\))**: The STB75NF75LT4 typically has a high \(V_{DSS}\) rating, which allows it to be used in high - voltage applications. For example, it can handle drain - source voltages up to 75V, making it suitable for a wide range of power - conversion and control circuits.
- **Continuous Drain Current (\(I_D\))**: It can support a relatively large continuous drain current. This current rating is an important parameter as it determines the maximum amount of current that the device can carry continuously without exceeding its temperature limits.
### 3.2 Gate - Source Voltage (\(V_{GS}\))
The gate - source voltage range is carefully specified to ensure proper operation of the device. The STB75NF75LT4 is designed to be driven by standard gate - drive circuits, with a typical \(V_{GS}\) range that allows for easy integration into existing power - electronics systems.
### 3.3 Thermal Resistance
The thermal resistance of the device is an important consideration for heat management. The STB75NF75LT4 series is designed with a relatively low thermal resistance, which means that heat can be dissipated more effectively from
Images for reference
TO-263
Image Preview
Image Preview