SKW25N120
High-voltage fast IGBT transistors for power semiconductor applications
Manufacturer： ['infineon', 'eupec-infineon']
series introduction
# SKW25N120 Product Series Introduction
## 1. Overview
The SKW25N120 product series is a remarkable line of power semiconductor devices that play a crucial role in a wide range of electrical and electronic applications. These devices are designed to handle high - power tasks efficiently, offering a combination of high performance, reliability, and advanced technology.
## 2. Key Specifications
### 2.1 Voltage and Current Ratings
- **Breakdown Voltage (Vdss)**: The SKW25N120 series typically features a breakdown voltage of 1200V. This high voltage rating makes it suitable for applications where high - voltage handling is required, such as in industrial power supplies, motor drives, and high - power inverters.
- **Continuous Drain Current (Id)**: With a continuous drain current rating of 25A, these devices can handle significant amounts of current, enabling them to power large - scale electrical loads.
### 2.2 On - Resistance (Rds(on))
The on - resistance of the SKW25N120 is relatively low. A low on - resistance is essential as it reduces power losses in the device when it is in the conducting state. This results in higher efficiency, less heat generation, and ultimately, lower operating costs. For example, in a power conversion application, a lower Rds(on) means less energy is wasted as heat, and more power is delivered to the load.
### 2.3 Gate - Source Voltage (Vgs)
The gate - source voltage range is carefully designed to ensure proper control of the device. The typical Vgs range allows for easy integration with common control circuits, providing flexibility in system design. It enables precise switching of the device, which is crucial for applications that require accurate power management.
## 3. Technology and Design Features
### 3.1 Advanced Semiconductor Material
The SKW25N120 series is likely fabricated using high - quality semiconductor materials, such as silicon carbide (SiC) or advanced silicon - based technologies. These materials offer superior electrical properties compared to traditional semiconductors, including higher electron mobility, better thermal conductivity, and lower leakage currents.
### 3.2 Package Design
The devices are housed in a well - designed package that provides excellent thermal performance and mechanical stability. The package is designed to efficiently dissipate heat generated during operation, ensuring that the device can operate within its specified temperature range. Additionally, the package is designed to be easily mounted on printed circuit boards (PCBs), facilitating the integration of the device into various electronic systems.
### 3.3 Protection Features
To enhance the reliability and durability of the devices, the SKW25N120 series is equipped with several protection features. These may include over - current protection, over - voltage protection, and thermal protection. Over - current protection prevents the device from being damaged due to excessive current flow, while over - voltage protection safeguards against high - voltage spikes. Thermal protection ensures that the device shuts down or reduces its performance if the temperature exceeds a safe limit.
## 4. Applications
### 4.1 Industrial Power Supplies
In industrial power supplies, the SKW25N120 series can be used to convert high - voltage AC power to low - voltage DC power. Its high voltage and current ratings, along with its low on - resistance, make it an ideal choice for handling the large power requirements of industrial equipment.
### 4.2 Motor Drives
Motor drives require precise control of power to drive motors efficiently. The SKW25N120 devices can be used in motor drive circuits to switch the power supply to the motor, enabling variable speed control and efficient operation. Their fast switching speeds and high - power handling capabilities make them suitable for both small and large
Images for reference
TO-247-3
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