MT47H64M16NF-25E IT:M

1Gb DDR2 SDRAM IC in 84-pin FBGA package

Manufacturer: micron

series introduction

# Introduction to the MT47H64M16NF - 25E IT:M Product Series

## 1. Overview
The MT47H64M16NF - 25E IT:M product series represents a cutting - edge offering in the field of memory technology. This series is designed to meet the high - performance and reliability requirements of a wide range of applications, from consumer electronics to industrial systems.

## 2. Key Features

### Memory Capacity
The MT47H64M16NF - 25E IT:M offers a substantial memory capacity. With a 64M x 16 configuration, it provides a total of 1 Gigabit (Gb) of memory. This large capacity makes it suitable for applications that require significant data storage and processing, such as high - end smartphones, tablets, and embedded systems that handle complex algorithms and large datasets.

### Speed and Performance
- **Clock Speed**: The "-25E" in the product name indicates its speed grade. It is capable of operating at a high clock speed, which enables fast data transfer rates. This high - speed operation is crucial for applications where real - time data processing is required, such as gaming consoles, video editing equipment, and network routers.
- **Low Latency**: The memory module has low latency characteristics. Low latency means that the time between a request for data and the actual delivery of that data is minimized. This results in smoother and more responsive system performance, especially in applications where quick access to data is essential, like in financial trading systems and high - performance computing clusters.

### Technology and Architecture
- **DDR Technology**: The MT47H64M16NF - 25E IT:M is based on Double Data Rate (DDR) technology. DDR memory transfers data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to single - data - rate (SDR) memory. This technology allows for more efficient use of the system bus and higher overall system throughput.
- **Advanced Memory Architecture**: It features an advanced memory architecture that optimizes power consumption and data access. The architecture is designed to reduce power dissipation while maintaining high performance, making it suitable for battery - powered devices such as laptops and mobile devices.

### Error Correction and Reliability
- **ECC Support**: The product series may support Error - Correcting Code (ECC) functionality. ECC memory can detect and correct single - bit errors and detect multi - bit errors. This is particularly important in applications where data integrity is critical, such as servers, industrial control systems, and aerospace applications.
- **High - Quality Components**: The MT47H64M16NF - 25E IT:M is built using high - quality semiconductor components. These components are rigorously tested during the manufacturing process to ensure high reliability and long - term performance. This makes the memory module suitable for use in harsh environments and applications with high uptime requirements.

## 3. Applications

### Consumer Electronics
- **Smartphones and Tablets**: The large memory capacity and high - speed performance of the MT47H64M16NF - 25E IT:M make it ideal for smartphones and tablets. It allows these devices to run multiple applications simultaneously, handle high - resolution graphics, and support smooth multitasking.
- **Gaming Consoles**: In gaming consoles, the memory module's low latency and high data transfer rates are essential for providing a seamless gaming experience. It enables fast loading times, smooth gameplay, and high - quality graphics rendering.

### Industrial and Embedded Systems
- **Industrial Control Systems**: Industrial control systems require reliable and high - performance memory to manage complex processes and monitor sensors. The ECC support and high - quality components of the MT47H64

Datasheets

Partlist

MT47H64M16NF-25E IT:M