Low-power DDR3L SDRAM chips for high-speed memory applications
Manufacturer： micron
# Introduction to the MT41K512M8RH - 125:E Product Series
## 1. Overview
The MT41K512M8RH - 125:E is a high - performance dynamic random - access memory (DRAM) product series designed to meet the demanding requirements of modern electronic systems. This series offers a balance of capacity, speed, and reliability, making it suitable for a wide range of applications, from consumer electronics to industrial and enterprise systems.
## 2. Key Specifications
### Memory Capacity
Each module in the MT41K512M8RH - 125:E series provides a memory capacity of 512 megabytes (MB). With an 8 - bit data bus width, it can efficiently transfer data in and out of the memory, enabling smooth operation of applications that require significant data storage and retrieval.
### Speed and Timing
The "125" in the product name indicates its speed rating. It operates at a clock frequency that allows for fast data access and transfer. The precise timing parameters are carefully calibrated to ensure optimal performance. For example, it has short access times, which means that the time taken to retrieve data from the memory is minimized. This is crucial for applications such as gaming consoles, where quick response times are essential for a seamless user experience.
### Voltage Requirements
The MT41K512M8RH - 125:E series is designed to operate within a specific voltage range. It typically requires a supply voltage of [specific voltage value] volts, which is a standard voltage level in many electronic systems. This makes it compatible with a wide variety of motherboards and other components without the need for complex voltage conversion circuits.
## 3. Technology and Architecture
### DDR Technology
This product series is based on Double Data Rate (DDR) technology. DDR memory allows for data to be transferred on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to single - data - rate (SDR) memory. This results in significantly improved performance, especially in applications that involve high - speed data processing, such as video editing and data analytics.
### Bank and Array Structure
The memory is organized into multiple banks and arrays. The bank structure allows for parallel data access, meaning that different parts of the memory can be accessed simultaneously. This parallelism enhances the overall data throughput of the memory module. The array structure, on the other hand, determines how the individual memory cells are arranged, which affects the physical layout and electrical characteristics of the module.
## 4. Applications
### Consumer Electronics
- **Smartphones and Tablets**: In mobile devices, the MT41K512M8RH - 125:E can provide the necessary memory to run multiple applications simultaneously. It enables smooth multitasking, fast app launches, and seamless navigation through various user interfaces.
- **Gaming Consoles**: Gaming requires high - speed memory to handle complex graphics, textures, and game logic. This memory series can support the real - time rendering of high - definition graphics and ensure that games run smoothly without lag.
### Industrial Systems
- **Automation and Control Systems**: Industrial automation systems often need to process large amounts of sensor data in real - time. The MT41K512M8RH - 125:E can store and quickly access this data, enabling precise control of industrial processes and machinery.
- **Medical Equipment**: In medical devices such as imaging systems and patient monitoring equipment, reliable and high - speed memory is crucial. This memory series can handle the large data sets generated by medical imaging and ensure accurate and timely analysis of patient data.
### Enterprise Systems
- **Servers**: Servers need to handle multiple user requests and process large amounts of data. The MT