MT41J64M16JT-125
1Gb DDR3 SDRAM chips in FBGA packaging for high-speed memory applications
Manufacturer： micron
series introduction
# Introduction to the MT41J64M16JT - 125 Product Series
## 1. Overview
The MT41J64M16JT - 125 is a high - performance Dynamic Random Access Memory (DRAM) product series designed to meet the demanding requirements of modern electronic systems. This series is engineered with advanced semiconductor technology to provide reliable and efficient memory solutions for a wide range of applications, from consumer electronics to industrial and enterprise systems.
## 2. Key Specifications
### Memory Capacity
Each module in the MT41J64M16JT - 125 series offers a memory capacity of 64 megabits (Mbit) organized as 16 million words by 16 bits. This configuration allows for efficient data storage and retrieval, making it suitable for applications that require handling large amounts of data.
### Speed and Timing
The "- 125" in the product name indicates the speed grade. It has a clock cycle time of 125 nanoseconds (ns), which corresponds to a clock frequency of 800 MHz. This high - speed operation enables rapid data access, reducing latency and improving the overall performance of the system. The series also features optimized timing parameters, such as CAS (Column Address Strobe) latency, RAS (Row Address Strobe) to CAS delay, and precharge time, which are carefully calibrated to ensure smooth and efficient memory operations.
### Voltage Requirements
The MT41J64M16JT - 125 operates at a standard voltage of 1.5V, which is a common voltage level for DRAM modules. This low - voltage operation not only helps in reducing power consumption but also makes it compatible with a wide range of motherboards and system designs.
### Package Type
The series is available in a specific package type, typically a small - outline dual - in - line memory module (SO - DIMM) or a ball grid array (BGA) package. The choice of package depends on the application requirements, such as space constraints and ease of integration. The packages are designed to provide good electrical connectivity and mechanical stability, ensuring reliable performance in various operating environments.
## 3. Technical Features
### Error Correction Code (ECC) Support
Some models in the MT41J64M16JT - 125 series may support ECC functionality. ECC is a crucial feature that can detect and correct single - bit errors and detect multi - bit errors in the memory. This helps in improving the reliability of the system, especially in applications where data integrity is of utmost importance, such as servers, industrial control systems, and high - end workstations.
### Burst Mode Operation
The DRAM modules support burst mode operation, which allows for the sequential access of multiple data words with a single address cycle. This significantly improves the data transfer rate, as the memory can quickly deliver a block of data without the need for repeated address setup. Burst mode operation is particularly useful in applications that involve streaming data, such as video playback and data transfer between the memory and the processor.
### Self - Refresh Mode
To conserve power when the system is idle, the MT41J64M16JT - 125 series supports self - refresh mode. In this mode, the memory can refresh its contents internally without the need for external control signals. This reduces the power consumption of the memory module, making it more energy - efficient and suitable for battery - powered devices.
## 4. Applications
### Consumer Electronics
In consumer electronics, the MT41J64M16JT - 125 series can be used in devices such as smartphones, tablets, and smart TVs. In smartphones and tablets, the high - speed memory helps in running multiple applications simultaneously, providing
Images for reference
96-TFBGA