MMBT2907ALT3G
General-purpose PNP bipolar transistors in compact SOT-23 packages
Manufacturer： onsemi
series introduction
# Introduction to the MMBT2907ALT3G Product Series
## 1. Overview
The MMBT2907ALT3G is a significant member of the semiconductor product family, specifically a PNP bipolar junction transistor (BJT). These transistors are fundamental building - blocks in electronic circuits, and the MMBT2907ALT3G series offers a range of features and performance characteristics that make it suitable for a wide variety of applications.
## 2. Physical Characteristics
### Package
The MMBT2907ALT3G comes in a SOT - 23 surface - mount package. This package is highly popular in modern electronics due to its small size. The SOT - 23 package has a compact footprint, which is ideal for printed circuit boards (PCBs) where space is at a premium. It typically has three leads, which are used for the emitter, base, and collector connections of the transistor. The small size also allows for high - density PCB designs, enabling the integration of more components on a single board.
### Dimensions
The exact dimensions of the SOT - 23 package are standardized. It has a length of around 2.9 mm, a width of approximately 1.3 mm, and a height of about 1.1 mm. These precise dimensions ensure compatibility with automated pick - and - place manufacturing processes, which are commonly used in large - scale electronics production.
## 3. Electrical Characteristics
### Voltage and Current Ratings
- **Collector - Emitter Voltage (VCE):** The MMBT2907ALT3G has a maximum collector - emitter voltage rating of around - 60 V. This means that it can handle relatively high reverse - bias voltages between the collector and the emitter without breaking down.
- **Collector Current (IC):** It can support a continuous collector current (IC) of up to - 600 mA. This current - handling capacity makes it suitable for applications where moderate to high currents need to be controlled.
- **Base Current (IB):** The base current is used to control the flow of current between the collector and the emitter. The MMBT2907ALT3G has specific base - current requirements that are determined by its gain characteristics.
### Gain and Frequency Response
- **DC Current Gain (hFE):** The DC current gain of the MMBT2907ALT3G is typically in the range of 100 - 300. This gain factor indicates how much the base current is amplified to produce the collector current. A higher gain allows for more efficient control of the collector current with a relatively small base current.
- **Frequency Response:** It has a transition frequency (fT) of around 250 MHz. This means that the transistor can operate effectively at frequencies up to this value, making it suitable for applications in both low - frequency and some high - frequency circuits.
## 4. Thermal Characteristics
### Thermal Resistance
The MMBT2907ALT3G has a thermal resistance (θJA) of approximately 430 °C/W. This parameter is crucial as it determines how well the transistor can dissipate heat. A lower thermal resistance means that the transistor can transfer heat more efficiently to the surrounding environment, reducing the risk of overheating and ensuring stable operation.
### Operating Temperature Range
The transistor can operate within a temperature range of - 55 °C to 150 °C. This wide temperature range makes it suitable for use in various environments, from extremely cold industrial settings to high - temperature automotive applications.
## 5. Applications
### Switching Applications
- **Power Management:** In power - management circuits, the MMBT2907ALT3G can be used as a switch to
Images for reference
SOT-23-3_527AG
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