IXFR180N10
High-power N-channel MOSFETs for efficient electronic switching applications
Manufacturer： ['ixys', 'ixys-semiconductor']
series introduction
# IXFR180N10 Product Series Introduction
## 1. Overview
The IXFR180N10 product series is a remarkable line of power MOSFETs (Metal - Oxide - Semiconductor Field - Effect Transistors) developed by Infineon Technologies. These MOSFETs are engineered to meet the demanding requirements of a wide range of power electronics applications, offering high - performance, reliability, and efficiency.
## 2. Key Features
### Electrical Characteristics
- **Low On - Resistance (RDS(on))**: One of the most significant features of the IXFR180N10 series is its extremely low on - resistance. With a typical RDS(on) value in the range that is optimized for high - current applications, it minimizes power losses during conduction. This low resistance allows for efficient power transfer, reducing heat generation and improving overall system efficiency. For example, in a high - power DC - DC converter, the low RDS(on) helps to increase the conversion efficiency, resulting in less wasted energy and lower operating costs.
- **High Current Capability**: These MOSFETs are designed to handle high continuous drain currents. The IXFR180N10 can support substantial current levels, making them suitable for applications such as motor drives, where large amounts of current are required to drive the motors. This high - current handling capacity ensures that the MOSFETs can operate reliably under heavy load conditions without overheating or experiencing performance degradation.
- **Fast Switching Speed**: The IXFR180N10 series offers fast switching times, which is crucial in applications that require high - frequency operation. Fast switching reduces the time during which the MOSFET is in the transition state between on and off, minimizing switching losses. In high - frequency power supplies, such as those used in telecommunications equipment, the fast switching speed of these MOSFETs enables the design of more compact and efficient power converters.
### Thermal Performance
- **Excellent Thermal Dissipation**: The MOSFETs in the IXFR180N10 series are designed with a structure that allows for efficient heat dissipation. They have a low thermal resistance from the junction to the case, which means that heat can be transferred quickly from the active part of the device to the external heat sink. This helps to keep the junction temperature within safe limits, even under high - power operation. For example, in a high - power LED lighting system, the good thermal performance of the IXFR180N10 ensures stable operation and a longer lifespan of the LEDs.
### Package and Design
- **Robust Package**: The IXFR180N10 is available in a well - designed and robust package. The package provides mechanical protection to the MOSFET die and also facilitates easy mounting on printed circuit boards (PCBs). It is designed to withstand mechanical stress, vibration, and environmental factors, ensuring long - term reliability in various operating conditions.
- **Low Inductance Package Design**: The package design of the IXFR180N10 series minimizes parasitic inductance. Low inductance is important in high - frequency applications as it reduces voltage spikes during switching, improving the overall stability and performance of the circuit.
## 3. Applications
### Motor Drives
- In motor drive applications, the IXFR180N10 series is used to control the power flow to the motor. Its high current - handling capacity and low on - resistance make it suitable for driving both DC and AC motors. For example, in electric vehicles, these MOSFETs can be used in the motor controller to efficiently convert the battery power into the appropriate voltage and current levels required to drive the traction motor.
- The fast switching speed of the IXFR180N10 also enables precise control of the motor speed and torque, improving the overall performance and efficiency of the motor drive
Images for reference
ISOPLUS247 Pkg
Image Preview