IXFB52N90 Series - ICGPT.ai

series introduction

# IXFB52N90 Product Series Introduction

## 1. Overview
The IXFB52N90 product series is a remarkable line of power MOSFETs (Metal - Oxide - Semiconductor Field - Effect Transistors) engineered by Infineon, a leading name in the semiconductor industry. These MOSFETs are designed to meet the demanding requirements of high - power applications, offering a combination of high performance, reliability, and efficiency.

## 2. Key Features

### 2.1 High Voltage Rating
The IXFB52N90 series is characterized by a high breakdown voltage of 900V. This high - voltage capability makes it suitable for applications where the circuit needs to handle large voltage swings, such as in switch - mode power supplies (SMPS), high - voltage inverters, and industrial motor drives. It can withstand high - voltage spikes and transients without getting damaged, ensuring the stability and safety of the overall system.

### 2.2 Low On - Resistance (RDS(on))
One of the standout features of this product series is its low on - resistance. With a typical RDS(on) value in the range that is optimized for efficient power handling, it minimizes power losses during conduction. When the MOSFET is in the on - state, a lower RDS(on) means less heat is generated, which in turn improves the overall efficiency of the system. This is crucial in applications where energy efficiency is a top priority, as it can lead to reduced power consumption and longer device lifetimes.

### 2.3 Fast Switching Speed
The IXFB52N90 MOSFETs offer fast switching times, enabling them to turn on and off rapidly. This fast switching characteristic is essential in high - frequency applications, such as high - frequency SMPS and resonant converters. By reducing the time the MOSFET spends in the transition between the on and off states, it minimizes switching losses and allows for higher operating frequencies, which can lead to smaller and more compact power supply designs.

### 2.4 Avalanche Energy Rating
These MOSFETs have a high avalanche energy rating. Avalanche breakdown can occur when the voltage across the MOSFET exceeds its breakdown voltage due to transient events. The high avalanche energy rating of the IXFB52N90 series ensures that the device can safely dissipate the energy associated with avalanche breakdown without failure. This makes it more robust and reliable in applications where voltage spikes and transients are common, such as in automotive and industrial environments.

## 3. Package Options
The IXFB52N90 product series is available in various industry - standard packages. These packages are designed to provide good thermal performance, mechanical stability, and ease of integration into different circuit boards.

### 3.1 TO - 247 Package
The TO - 247 package is a popular choice for high - power applications. It offers excellent thermal dissipation capabilities, allowing the MOSFET to operate at high power levels without overheating. The large surface area of the TO - 247 package enables efficient heat transfer to a heat sink, which is essential for maintaining the device's temperature within a safe operating range. Additionally, the TO - 247 package has a well - defined pinout, making it easy to connect to the circuit board.

## 4. Applications

### 4.1 Switch - Mode Power Supplies (SMPS)
In SMPS, the IXFB52N90 MOSFETs can be used as the main switching element. Their high - voltage rating and low on - resistance make them ideal for converting high - voltage DC power to low - voltage DC power efficiently. The fast switching speed also allows for high - frequency operation, which can reduce the size of the passive components in the power supply, such as inductors and capacitors

Images for reference

TO-264

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Datasheets

Partlist

IXFB52N90P