IS61WV51216BLL-10MLI
High-speed 8M-bit asynchronous SRAM chips in compact Mini-BGA format
Manufacturer： issi
series introduction
# IS61WV51216BLL - 10MLI Product Series Introduction
## 1. Overview
The IS61WV51216BLL - 10MLI is a high - performance static random - access memory (SRAM) product series designed to meet the demanding requirements of various electronic systems. SRAM is known for its fast access times and low power consumption compared to other types of memory, making it an ideal choice for applications where speed and efficiency are crucial.
## 2. Key Features
### 2.1 Memory Capacity
This product series offers a memory capacity of 512K words, with each word being 16 bits wide. This large capacity allows for the storage of a significant amount of data, making it suitable for applications that require the handling of large datasets, such as image processing, data logging, and real - time data buffering.
### 2.2 Fast Access Time
One of the standout features of the IS61WV51216BLL - 10MLI is its fast access time. With an access time of 10 ns, it can quickly retrieve and store data, enabling high - speed data processing. This is particularly important in applications where real - time response is essential, such as in high - speed communication systems, networking equipment, and high - performance computing.
### 2.3 Low Power Consumption
The series is designed with low - power operation in mind. It consumes minimal power during both active and standby modes, which is beneficial for battery - powered devices and energy - efficient systems. The low power consumption helps to extend the battery life of portable devices and reduces the overall energy costs of larger systems.
### 2.4 Compatibility
The IS61WV51216BLL - 10MLI is compatible with a wide range of microcontrollers, microprocessors, and other digital integrated circuits. It uses standard TTL (Transistor - Transistor Logic) levels for input and output, which simplifies the interface design and allows for easy integration into existing electronic systems.
### 2.5 Package Type
It comes in a small - outline integrated circuit (SOIC) package, which is a popular choice for surface - mount technology (SMT) applications. The SOIC package offers good thermal performance and mechanical stability, making it suitable for a variety of environmental conditions.
## 3. Functional Description
### 3.1 Addressing
The 512K x 16 - bit memory organization requires 19 address lines (A0 - A18) to select a specific word within the memory array. The address lines are used to specify the location of the data to be read from or written to the memory.
### 3.2 Data I/O
The 16 - bit data bus (D0 - D15) is used for both reading data from the memory and writing data to it. When the memory is in read mode, the data stored at the specified address is output onto the data bus. In write mode, the data on the data bus is written to the specified memory location.
### 3.3 Control Signals
- **Chip Select (CS)**: This signal is used to enable or disable the memory chip. When CS is low, the chip is enabled, and data can be read from or written to the memory. When CS is high, the chip is disabled, and the memory is in a standby state.
- **Output Enable (OE)**: The OE signal controls the output buffer of the memory. When OE is low and CS is also low, the data stored at the specified address is output onto the data bus.
- **Write Enable (WE)**: The WE signal is used to control the write operation. When WE is low,
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IS61WV25616BLL-10BLI
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