IRFP460C
High-power N-channel MOSFETs in TO-3P package for robust applications
Manufacturer： ['fairchild', 'rochester', 'onsemi']
series introduction
# IRFP460C Product Series Introduction
## 1. Overview
The IRFP460C belongs to a high - performance power MOSFET product series developed by Infineon Technologies. Power MOSFETs are crucial semiconductor devices widely used in power electronics applications due to their ability to handle high power levels while offering efficient switching characteristics. The IRFP460C is specifically designed to meet the demanding requirements of various power conversion and control systems.
## 2. Key Features
### 2.1 High Voltage Rating
The IRFP460C has a high drain - source breakdown voltage (V<sub>(BR)DSS</sub>). Typically, it can withstand a breakdown voltage of around 500V. This high voltage rating makes it suitable for applications where the power supply voltage is relatively high, such as in high - voltage DC - DC converters, switch - mode power supplies (SMPS), and motor drive circuits.
### 2.2 Low On - Resistance
One of the most significant features of the IRFP460C is its low on - resistance (R<sub>DS(on)</sub>). With a low R<sub>DS(on)</sub> value (usually in the range of a few hundred milliohms), the MOSFET experiences less power dissipation when conducting current. This results in higher efficiency, reduced heat generation, and improved overall system performance. Lower power dissipation also means that less heat needs to be removed from the device, which can simplify the thermal management design of the application.
### 2.3 Fast Switching Speed
The IRFP460C offers fast switching times, including short turn - on and turn - off times. This fast switching capability is essential for high - frequency applications. In high - frequency power converters, fast switching allows for smaller passive components such as inductors and capacitors, which can reduce the size and cost of the overall system. Additionally, fast switching helps to minimize switching losses, further improving the efficiency of the power conversion process.
### 2.4 Avalanche Energy Rating
It has a relatively high avalanche energy rating (E<sub>AS</sub>). This means that the device can withstand high - energy transient events, such as voltage spikes and surges, without being damaged. In real - world applications, electrical systems are often subject to various transient conditions, and the high avalanche energy rating of the IRFP460C provides a certain level of protection against these potentially harmful events, enhancing the reliability of the system.
## 3. Package and Thermal Characteristics
### 3.1 Package Type
The IRFP460C is commonly available in a TO - 247 package. The TO - 247 is a popular through - hole package known for its good thermal performance and mechanical stability. It has three leads (drain, gate, and source) that are easy to connect to the printed circuit board (PCB). The large surface area of the TO - 247 package allows for efficient heat transfer from the device to the heat sink, which is crucial for maintaining the device's temperature within a safe operating range.
### 3.2 Thermal Resistance
The thermal resistance of the IRFP460C, such as the junction - to - case thermal resistance (R<sub>θJC</sub>), is relatively low. A low R<sub>θJC</sub> value indicates that heat can be transferred more effectively from the semiconductor junction (where the power is dissipated) to the package case. This enables the use of smaller and less expensive heat sinks, or in some cases, allows for more compact system designs.
## 4. Applications
### 4.1 Switch - Mode Power Supplies (SMPS)
In SMPS, the IRFP460C can be used
Images for reference
TO-3P-3,TO-247-3