IPB60R099CP
High-power N-channel MOSFETs for efficient energy management
Manufacturer： ['infineon', 'iscsemi']
series introduction
# IPB60R099CP Product Series Introduction
## 1. Overview
The IPB60R099CP product series represents a cutting - edge line of power MOSFETs designed to meet the diverse and demanding requirements of modern power electronics applications. These MOSFETs are engineered with advanced semiconductor technology to offer high - performance, reliability, and efficiency, making them an ideal choice for a wide range of industries.
## 2. Key Features
### 2.1 Low On - Resistance
One of the most prominent features of the IPB60R099CP series is its extremely low on - resistance (RDS(on)). With a typical RDS(on) value of 99 mΩ at a specified gate - source voltage, this MOSFET significantly reduces power losses during conduction. Lower on - resistance means less heat generation, which in turn improves the overall efficiency of the power system. This is crucial in applications where energy conservation and thermal management are of utmost importance.
### 2.2 High Voltage Rating
The MOSFETs in the IPB60R099CP series are rated for a high drain - source voltage (VDS) of 600V. This high - voltage capability allows them to handle large voltage swings and operate in high - voltage power circuits. It makes them suitable for applications such as switch - mode power supplies (SMPS), motor drives, and industrial power systems where high - voltage operation is required.
### 2.3 Fast Switching Speed
These MOSFETs are designed to have fast switching characteristics. The low gate charge (Qg) and short rise and fall times enable rapid turn - on and turn - off transitions. Fast switching speeds reduce switching losses, which is essential for high - frequency applications. In high - frequency power converters, for example, the ability to switch quickly helps to improve the power density and efficiency of the system.
### 2.4 Avalanche Energy Rating
The IPB60R099CP series offers a high avalanche energy rating (EAS). This means that the MOSFET can withstand high - energy transient events, such as inductive load switching, without being damaged. The high avalanche ruggedness provides an extra layer of protection for the power system, enhancing its reliability and durability in harsh operating environments.
### 2.5 Low Gate Drive Requirements
The MOSFETs in this series have relatively low gate drive requirements. This simplifies the design of the gate driver circuit, reducing the complexity and cost of the overall power system. Lower gate drive requirements also mean less power consumption in the gate driver, further improving the system's efficiency.
## 3. Package and Thermal Performance
### 3.1 Package Type
The IPB60R099CP is typically available in a standard TO - 220 package. The TO - 220 package is widely used in power electronics due to its excellent thermal performance and ease of mounting. It provides a large surface area for heat dissipation, allowing the MOSFET to operate at higher power levels without overheating.
### 3.2 Thermal Resistance
The low thermal resistance of the IPB60R099CP in the TO - 220 package ensures efficient heat transfer from the die to the heatsink. This helps to keep the junction temperature of the MOSFET within safe operating limits, even under high - power conditions. Good thermal management is essential for maintaining the long - term reliability and performance of the MOSFET.
## 4. Applications
### 4.1 Switch - Mode Power Supplies (SMPS)
In SMPS, the IPB60R099CP series can be used as the main switching device. Its low on - resistance and fast switching speed contribute to high - efficiency power conversion. The high - voltage rating allows it to
Images for reference
TO-263
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