FQPF1N60

N-channel MOSFETs, 600V, 0.9A, TO-220F package

Manufacturer: ['fairchild', 'onsemi', 'freescale']

series introduction

# FQPF1N60 Product Series Introduction

## 1. Overview
The FQPF1N60 product series belongs to the family of high - voltage N - channel MOSFETs (Metal - Oxide - Semiconductor Field - Effect Transistors). These devices are designed to meet a wide range of power electronics applications, offering a combination of high performance, reliability, and efficiency.

## 2. Key Features

### 2.1 High Voltage Capability
The "60" in the FQPF1N60 indicates that these MOSFETs are rated for a maximum drain - source voltage (VDS) of 600V. This high - voltage rating makes them suitable for applications where the circuit needs to handle relatively large voltage swings, such as in switch - mode power supplies (SMPS), high - voltage inverters, and some types of motor control circuits.

### 2.2 Low On - Resistance (RDS(on))
The FQPF1N60 series features a low on - resistance characteristic. A low RDS(on) value means that when the MOSFET is in the on - state, there is less power dissipated as heat across the device. This not only improves the overall efficiency of the circuit but also reduces the need for complex and bulky heat - sinking solutions. For example, in power conversion applications, lower RDS(on) results in less power loss during the conduction phase, leading to higher energy efficiency.

### 2.3 Fast Switching Speed
These MOSFETs are designed to have fast switching times. Fast switching is crucial in applications like SMPS, where the MOSFET needs to rapidly turn on and off to control the flow of power. The fast switching speed helps to reduce switching losses, which are a significant source of power dissipation in high - frequency circuits. It also enables the design of high - frequency power converters, which can be more compact and efficient compared to their low - frequency counterparts.

### 2.4 Avalanche Energy Rating
The FQPF1N60 series has a specified avalanche energy rating. Avalanche breakdown can occur in a MOSFET when the voltage across the drain - source terminals exceeds the rated value. The ability of the device to withstand avalanche events without damage is important in applications where there may be voltage spikes or transient over - voltages, such as in inductive load circuits.

## 3. Package Options
The FQPF1N60 is typically available in industry - standard packages. One common package is the TO - 220 package. The TO - 220 package offers several advantages:
- **Good Thermal Performance**: It has a large surface area that allows for efficient heat dissipation. This is important for high - power applications, as it helps to keep the MOSFET at a safe operating temperature.
- **Easy Mounting**: The TO - 220 package is designed for easy mounting on heat sinks using standard mounting hardware. This makes it convenient for circuit designers to integrate the MOSFET into their systems.

## 4. Applications

### 4.1 Switch - Mode Power Supplies (SMPS)
In SMPS, the FQPF1N60 can be used as the main switching device. It controls the flow of power from the input source to the output load by rapidly switching on and off. The high - voltage rating allows it to handle the input voltage, while the low on - resistance and fast switching speed contribute to the overall efficiency and performance of the power supply.

### 4.2 Inverters
Inverters are used to convert DC power to AC power. The FQPF1N60 can be used in the inverter circuit to control the switching of the DC input to generate the desired AC output. Its high - voltage and fast - switching capabilities make it suitable for both low

Images for reference

TO-220AB Full Pack

TO-220AB Full Pack

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Datasheets

Partlist

FQPF1N60
FQPF1N60T