FF900R12IE4
High-power N-channel IGBT modules for industrial applications
Manufacturer： infineon
series introduction
# Introduction to the FF900R12IE4 Product Series
## 1. Overview
The FF900R12IE4 is a remarkable product series within the realm of power electronics. It belongs to the family of insulated - gate bipolar transistor (IGBT) modules, which are crucial components in a wide range of high - power applications. These modules are designed to handle significant electrical power while offering high efficiency, reliability, and advanced performance features.
## 2. Key Specifications
### Electrical Specifications
- **Voltage Rating**: The FF900R12IE4 is rated for a maximum DC link voltage of 1200V. This high - voltage rating makes it suitable for applications that require the handling of large electrical potentials, such as medium - voltage drives, renewable energy systems, and high - power industrial equipment.
- **Current Rating**: With a continuous collector current rating of 900A, the module can handle substantial electrical currents. This allows it to be used in high - power applications where large amounts of power need to be transferred, such as in traction drives for electric vehicles and high - power motor control systems.
- **Power Dissipation**: The module is designed to manage power dissipation effectively. It has a relatively low on - state voltage drop, which reduces the power loss during conduction. This not only improves the overall efficiency of the system but also helps in minimizing heat generation, thereby extending the lifespan of the module.
### Thermal Specifications
- **Thermal Resistance**: The FF900R12IE4 has a low thermal resistance between the junction and the case. This efficient heat transfer characteristic enables the module to dissipate heat quickly to the heat sink, ensuring stable operation even under high - power and high - temperature conditions.
- **Operating Temperature Range**: It can operate within a wide temperature range, typically from - 40°C to 150°C. This wide operating temperature range makes it suitable for use in various environmental conditions, from cold industrial settings to hot and humid outdoor environments.
## 3. Technical Features
### IGBT Technology
- The FF900R12IE4 utilizes advanced IGBT technology. IGBTs combine the advantages of both bipolar junction transistors (BJTs) and metal - oxide - semiconductor field - effect transistors (MOSFETs). They offer high input impedance like MOSFETs, which simplifies the gate drive circuit design, and high current - carrying capability like BJTs, making them ideal for high - power applications.
- The IGBTs in this module have a fast switching speed, which reduces the switching losses and improves the overall efficiency of the power conversion system. This fast switching also enables the module to be used in high - frequency applications, where rapid changes in current and voltage are required.
### Free - Wheeling Diodes
- The module is equipped with free - wheeling diodes that are integrated with the IGBTs. These diodes provide a path for the inductive current to flow when the IGBTs are turned off. They have a low forward voltage drop and fast reverse recovery time, which helps in reducing the power losses and improving the reliability of the system.
### Package Design
- The FF900R12IE4 comes in a robust and compact package. The package design provides good mechanical stability and electrical insulation. It also allows for easy mounting on heat sinks, which is essential for efficient heat dissipation. The package is designed to protect the internal components from environmental factors such as dust, moisture, and mechanical vibrations.
## 4. Applications
### Industrial Drives
- In industrial motor drives, the FF900R12IE4 can be used to control the speed and torque of large - power motors. Its high - current and high - voltage ratings make it suitable for driving motors in applications such as conveyor systems, pumps
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