FF200R12KE4

Dual NPN IGBT modules for high-power applications

Manufacturer: ['infineon', 'eupec-infineon']

series introduction

# Introduction to the FF200R12KE4 Product Series

## 1. Overview
The FF200R12KE4 is a remarkable product series within the realm of power electronics. It belongs to the family of insulated - gate bipolar transistors (IGBT) modules, which are crucial components in a wide range of high - power applications. These modules are designed to handle significant electrical power while offering high efficiency, reliability, and advanced performance features.

## 2. Key Specifications

### Electrical Specifications
- **Collector - Emitter Voltage (V<sub>CES</sub>)**: The FF200R12KE4 is rated for a collector - emitter voltage of 1200V. This high voltage rating makes it suitable for applications that require the handling of high - voltage electrical systems, such as medium - voltage drives, renewable energy power conversion, and high - power industrial equipment.
- **Continuous Collector Current (I<sub>C</sub>)**: It can handle a continuous collector current of 200A. This high current - carrying capacity enables the module to drive large loads and power - hungry devices, ensuring smooth and stable operation even under heavy - duty conditions.
- **Gate - Emitter Voltage (V<sub>GE</sub>)**: The typical gate - emitter voltage range is designed to be compatible with standard gate - driver circuits. This allows for easy integration into existing control systems, simplifying the design process for engineers.

### Thermal Specifications
- **Thermal Resistance**: The module has a low thermal resistance, which is essential for efficient heat dissipation. Low thermal resistance ensures that the heat generated during operation can be quickly transferred away from the IGBT chips, preventing overheating and maintaining the reliability and performance of the module.
- **Operating Temperature Range**: It can operate within a wide temperature range, typically from - 40°C to 150°C. This wide temperature tolerance makes the FF200R12KE4 suitable for use in various environmental conditions, including harsh industrial environments and outdoor applications.

## 3. Product Features

### Advanced IGBT Technology
- The FF200R12KE4 utilizes the latest IGBT technology, which offers low conduction losses and fast switching speeds. Low conduction losses mean that less power is wasted as heat during normal operation, resulting in higher energy efficiency. Fast switching speeds enable the module to handle high - frequency signals, making it suitable for applications such as high - frequency inverters and motor drives.
- The IGBT chips in the module are designed with a soft - switching characteristic, which reduces electromagnetic interference (EMI) and improves the overall system reliability. Soft switching helps to minimize voltage and current spikes during the switching process, protecting other components in the circuit from damage.

### Integrated Free - Wheeling Diodes
- Each FF200R12KE4 module comes with integrated free - wheeling diodes. These diodes are essential in circuits where inductive loads are present, such as motor drives. The free - wheeling diodes provide a path for the current to flow when the IGBT is turned off, preventing voltage spikes and protecting the IGBT from damage.
- The diodes are designed to have low forward voltage drops, which further improves the overall efficiency of the module.

### Robust Packaging
- The module is housed in a robust and compact package. The package design provides excellent mechanical protection for the internal components, ensuring long - term reliability even in harsh operating conditions.
- It also features a high - quality isolation structure, which provides electrical isolation between the power terminals and the heat sink. This isolation is crucial for safety reasons, especially in high - voltage applications.

## 4. Applications

### Industrial Motor Drives
- In industrial motor drives, the FF200R12KE4 can be used to

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Partlist

FF200R12KE4
FF200R12KE4HOSA1