BC847CMTF
General-purpose NPN silicon transistors for switching and amplification
Manufacturer： ['fairchild', 'onsemi', 'freescale']
series introduction
# BC847CMTF Product Series Introduction
## 1. Overview
The BC847CMTF product series belongs to the family of small - signal bipolar junction transistors (BJTs). These transistors are widely used in various electronic circuits due to their excellent electrical characteristics and reliable performance. They are designed to handle low - power applications with high precision and efficiency, making them a popular choice among electronics engineers and hobbyists alike.
## 2. Physical Characteristics
### Package
The BC847CMTF is typically available in a SOT - 23 surface - mount package. This package is compact, with a small footprint on the printed circuit board (PCB). The SOT - 23 package has three leads, which are clearly marked for easy identification and connection during the assembly process. Its small size makes it suitable for use in space - constrained applications such as mobile devices, wearable electronics, and other miniaturized electronic products.
### Dimensions
The SOT - 23 package of the BC847CMTF has standard dimensions. The length is approximately 2.9 mm, the width is around 1.3 mm, and the height is about 1.1 mm. These precise dimensions ensure compatibility with automated pick - and - place machines used in mass - production PCB assembly, facilitating high - volume manufacturing processes.
## 3. Electrical Characteristics
### Type and Polarity
The BC847CMTF is an NPN bipolar junction transistor. In an NPN transistor, the majority carriers are electrons. This type of transistor is commonly used in amplifier circuits and switching applications where current flows from the collector to the emitter when a sufficient base current is applied.
### DC Current Gain (hFE)
One of the key electrical parameters of the BC847CMTF is its DC current gain, denoted as hFE. The typical hFE value for this transistor series is in the range of 200 - 600 at a collector current (IC) of 10 mA and a collector - emitter voltage (VCE) of 5 V. This relatively high current gain allows for efficient signal amplification in low - power circuits. For example, in audio amplifier circuits, the high hFE value enables the transistor to amplify weak audio signals to a usable level.
### Collector - Emitter Breakdown Voltage (V(BR)CEO)
The collector - emitter breakdown voltage, V(BR)CEO, is an important parameter that indicates the maximum voltage that can be applied between the collector and the emitter without causing the transistor to break down. For the BC847CMTF, the V(BR)CEO is typically around 45 V. This breakdown voltage rating makes the transistor suitable for use in circuits where the supply voltage is relatively low, such as battery - powered devices.
### Collector Current (IC)
The maximum continuous collector current (IC) that the BC847CMTF can handle is approximately 100 mA. This current - handling capacity allows the transistor to drive small loads, such as LEDs, small relays, or other low - power components. In a simple LED driver circuit, the BC847CMTF can be used to control the current flowing through the LED, ensuring proper illumination.
### Power Dissipation (PD)
The power dissipation of the BC847CMTF is an important consideration, especially in applications where heat generation needs to be minimized. The maximum power dissipation (PD) of this transistor in the SOT - 23 package is typically around 250 mW. This relatively low power dissipation makes it suitable for use in low - power, energy - efficient circuits.
## 4. Applications
### Amplifier Circuits
The high DC current gain of the BC847CMTF makes it an ideal choice for small - signal amplifier circuits. In audio
Images for reference
SOT-23-3
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