BC847BDW1T
Bipolar transistors in SOT-363 package
Manufacturer： ['onsemi', 'rochester', 'lrc']
series introduction
The BC847BDW1T Series is a sophisticated line of NPN bipolar junction transistors (BJTs) designed to deliver exceptional performance in a variety of electronic applications. Renowned for their reliability and versatility, these transistors are ideal for low-power amplification and switching tasks, making them a popular choice among engineers and designers in the electronics industry.
One of the standout features of the BC847BDW1T Series is its impressive electrical performance, characterized by a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. This series is built to operate efficiently with a maximum power dissipation of 500 mW, ensuring that it can handle demanding operational conditions without compromising on performance. The transistors are also optimized for low noise and high gain, with a current gain (hFE) typically ranging from 100 to 800, making them suitable for audio applications and signal processing tasks.
The design characteristics of the BC847BDW1T Series include a compact SOT-23 package that not only conserves board space but also enhances thermal performance through efficient heat dissipation. This compact form factor allows for easier integration into high-density circuit layouts, which is essential in today's miniaturized electronic devices. Moreover, the transistors are manufactured using advanced processes that ensure high reliability and consistent performance across a wide range of temperatures.
Common use cases for the BC847BDW1T Series include consumer electronics, such as smartphones, tablets, and audio equipment, where efficient amplification and switching are crucial. Additionally, these transistors find applications in industrial automation systems, automotive electronics, and telecommunications equipment, where their robustness and efficiency can significantly enhance overall system performance.
In summary, the BC847BDW1T Series stands as a reliable choice for engineers seeking high-performance NPN transistors. With their excellent electrical characteristics, compact design, and broad range of applications, they are well-suited to meet the evolving demands of modern electronic circuitry.
Images for reference
SOT-363 PKG
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