General-purpose PNP transistors in 14-pin packages
Manufacturer： ['microsemi', 'semicoa']
# Introduction to the 2N6987JANTX Product Series
## 1. Overview
The 2N6987JANTX is a highly specialized and reliable product series within the realm of semiconductor devices. Specifically designed to meet the stringent requirements of military and aerospace applications, this series offers exceptional performance, durability, and precision in a wide range of operating conditions.
## 2. Product Classification and Function
### Classification
The 2N6987JANTX belongs to the category of bipolar junction transistors (BJTs). BJTs are three - terminal semiconductor devices that can be used for amplification, switching, and signal processing applications.
### Function
- **Amplification**: It can amplify weak electrical signals. By controlling the current flowing through its terminals, the 2N6987JANTX can increase the amplitude of an input signal, making it suitable for use in audio amplifiers, radio frequency (RF) amplifiers, and other signal - boosting circuits.
- **Switching**: The transistor can act as an electronic switch, rapidly turning on and off electrical circuits. This property is crucial in digital circuits, power management systems, and control applications where fast and reliable switching is required.
## 3. Key Features
### High - Temperature Performance
- The 2N6987JANTX is engineered to operate effectively at elevated temperatures. It can withstand high - heat environments without significant degradation in performance, making it ideal for use in military and aerospace systems where components may be exposed to extreme thermal conditions during operation.
- This high - temperature tolerance is achieved through advanced semiconductor manufacturing techniques and the use of high - quality materials that can maintain their electrical properties even under thermal stress.
### Low Noise
- In applications where signal integrity is of utmost importance, such as in communication systems and sensitive measurement equipment, the low - noise characteristics of the 2N6987JANTX are a significant advantage.
- The transistor is designed to minimize the generation of electrical noise, ensuring that the amplified or processed signals remain clean and free from unwanted interference.
### High Gain
- It offers a high current gain, which means that a small input current can control a much larger output current. This high gain allows for efficient signal amplification and enables the design of circuits with high sensitivity and low power consumption.
### Radiation Hardness
- One of the most critical features of the 2N6987JANTX for military and aerospace applications is its radiation - hardness. In space and some military environments, components are exposed to high levels of radiation, which can cause damage to electronic devices.
- The 2N6987JANTX is designed to resist the effects of radiation, including single - event effects (SEE) and total ionizing dose (TID) effects. This ensures the long - term reliability and functionality of the device in radiation - prone environments.
## 4. Electrical Specifications
### Voltage Ratings
- The 2N6987JANTX has specific voltage ratings for its collector - emitter (VCE), collector - base (VCB), and emitter - base (VEB) junctions. These ratings define the maximum voltages that the transistor can safely withstand without breakdown or damage.
- For example, the collector - emitter breakdown voltage (BVCEO) is a key specification that indicates the maximum voltage that can be applied between the collector and emitter when the base is open - circuited.
### Current Ratings
- The series has well - defined current ratings, including the maximum collector current (ICmax) and the base current (IB). These ratings determine the amount of current that the transistor can handle without overheating or experiencing performance degradation.
- The current gain (hFE) is also an important electrical parameter, which is the ratio of the collector current to the base current. It