2MBI400U4H-120-50
High-power IGBT module for industrial applications
Manufacturer： fuji-electric
series introduction
# Introduction to the 2MBI400U4H - 120 - 50 Product Series
## 1. Overview
The 2MBI400U4H - 120 - 50 product series belongs to the realm of power semiconductor modules. These modules are engineered to play a crucial role in various power - electronic applications, offering high - performance and reliable solutions for power conversion and control. They are designed with advanced semiconductor technology to meet the demanding requirements of modern industrial and electrical systems.
## 2. Key Specifications
### 2.1 Current Rating
The "400" in the model number indicates a current rating of 400 Amperes. This high - current capacity makes the module suitable for applications that require significant power delivery, such as large - scale motor drives, high - power inverters, and industrial power supplies. It can handle substantial electrical loads without overheating or experiencing excessive power losses, ensuring stable operation even under heavy - duty conditions.
### 2.2 Voltage Rating
The "120" represents the voltage rating of the module. With a voltage rating of 1200 Volts, it can be used in medium - to high - voltage power systems. This allows for its application in a wide range of industrial settings, including renewable energy systems (such as solar and wind power inverters), where medium - voltage DC - to - AC conversion is required.
### 2.3 Package and Cooling
The module is designed in a specific package that is optimized for efficient heat dissipation. The "50" in the model number may be related to certain package or performance - related characteristics. Efficient heat management is essential for power semiconductor modules, as excessive heat can degrade performance and reduce the lifespan of the device. The 2MBI400U4H - 120 - 50 series is likely equipped with features such as a large - surface - area heat sink or a built - in cooling structure to maintain optimal operating temperatures.
## 3. Technical Features
### 3.1 Insulated Gate Bipolar Transistors (IGBTs)
The module is likely based on IGBT technology. IGBTs combine the advantages of MOSFETs (Metal - Oxide - Semiconductor Field - Effect Transistors) and bipolar junction transistors. They offer low on - state resistance, which results in reduced power losses during conduction. This is crucial for improving the overall efficiency of power - conversion systems. Additionally, IGBTs can be easily controlled with low - power gate signals, making them suitable for high - frequency switching applications.
### 3.2 Free - Wheeling Diodes
Integrated free - wheeling diodes are an important feature of the 2MBI400U4H - 120 - 50 series. These diodes provide a path for the inductive current to flow when the IGBTs are turned off. In applications such as motor drives, where inductive loads are common, the free - wheeling diodes prevent voltage spikes and protect the IGBTs from damage. They also help in improving the overall reliability and performance of the power - conversion system.
### 3.3 Protection Features
The module is likely equipped with various protection features to ensure safe and reliable operation. These may include over - current protection, over - voltage protection, and thermal protection. Over - current protection safeguards the module from excessive current flow, which can cause damage to the semiconductor devices. Over - voltage protection prevents the module from being exposed to voltages higher than its rated value. Thermal protection monitors the temperature of the module and takes appropriate action, such as reducing the power output or shutting down the device, if the temperature exceeds a safe limit.
## 4. Applications
### 4.1 Motor Drives
In motor - drive applications,
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