2MBI200N-120

High-power IGBT modules by Fuji for industrial applications

Manufacturer: fuji-electric

series introduction

# Introduction to the 2MBI200N - 120 Product Series

## 1. Overview
The 2MBI200N - 120 product series belongs to the realm of power semiconductor modules. These modules are engineered to handle high - power applications with efficiency, reliability, and precision. They are a crucial component in various industrial and electrical systems, enabling the smooth conversion and control of electrical power.

## 2. Key Specifications

### 2.1 Current and Voltage Ratings
- **Current Rating**: The "200" in the model number indicates that these modules are rated for a continuous collector current (IC) of 200 Amperes. This high - current capacity makes them suitable for applications that demand significant power delivery, such as large - scale motor drives and high - power inverters.
- **Voltage Rating**: The "120" represents a voltage rating of 1200 Volts. This high - voltage tolerance allows the modules to operate in systems with relatively high - voltage power supplies, providing a wide range of application possibilities in industrial and power distribution settings.

### 2.2 Power Dissipation
The 2MBI200N - 120 modules are designed to handle substantial power dissipation. With efficient heat - sinking mechanisms and advanced semiconductor materials, they can dissipate heat effectively during operation. This is essential for maintaining the module's performance and longevity, as excessive heat can degrade the semiconductor components and reduce the overall reliability of the system.

### 2.3 Switching Characteristics
- **Fast Switching Speeds**: These modules offer relatively fast switching times, which is crucial for applications such as pulse - width modulation (PWM) in inverters. Fast switching allows for more precise control of the output voltage and current, resulting in improved system efficiency and reduced harmonic distortion.
- **Low Switching Losses**: Minimizing switching losses is a key design consideration. The 2MBI200N - 120 series achieves low switching losses through advanced semiconductor technology and optimized circuit design. This not only improves the overall energy efficiency of the system but also reduces the heat generated during switching operations.

## 3. Construction and Design

### 3.1 Semiconductor Technology
The modules are typically based on insulated - gate bipolar transistor (IGBT) technology. IGBTs combine the advantages of both bipolar junction transistors (BJTs) and metal - oxide - semiconductor field - effect transistors (MOSFETs). They offer high - current - carrying capabilities like BJTs and the voltage - controlled switching characteristics of MOSFETs. This makes them ideal for high - power applications where efficient power control is required.

### 3.2 Packaging
The 2MBI200N - 120 modules are housed in a robust and compact package. The package is designed to provide electrical insulation, mechanical protection, and efficient heat transfer. It often includes features such as a ceramic substrate for improved thermal conductivity and a hermetic seal to protect the internal semiconductor components from environmental factors such as moisture and dust.

## 4. Applications

### 4.1 Motor Drives
In industrial motor drives, the 2MBI200N - 120 modules play a vital role in controlling the speed and torque of electric motors. They can convert the DC power from a power supply into AC power with variable frequency and voltage, allowing for precise control of motor operation. This is essential in applications such as conveyor systems, pumps, and machine tools, where accurate motor control is required for optimal performance.

### 4.2 Uninterruptible Power Supplies (UPS)
UPS systems are used to provide backup power in case of a mains power failure. The 2MBI200N - 120 modules are used in the inverter section of

Partlist

2MBI200N-120