1MBI400NN-120

series introduction

# Introduction to the 1MBI400NN - 120 Product Series

## 1. Overview
The 1MBI400NN - 120 product series belongs to the realm of power semiconductor modules. These modules are engineered to play a crucial role in various high - power electrical applications, offering a reliable and efficient solution for power conversion and control. With a focus on performance, durability, and flexibility, the 1MBI400NN - 120 series has become a popular choice among engineers and system integrators in multiple industries.

## 2. Key Specifications

### 2.1 Current and Voltage Ratings
- **Current Rating**: The "400" in the model number indicates that the module has a rated current of 400 Amperes. This high - current capacity makes it suitable for applications that demand significant power delivery, such as large - scale motor drives, high - power inverters, and industrial power supplies.
- **Voltage Rating**: The "120" represents a rated voltage of 1200 Volts. This voltage rating allows the module to handle high - voltage electrical systems, providing a wide range of operating conditions for different power applications.

### 2.2 Power Dissipation and Thermal Characteristics
- **Power Dissipation**: The module is designed to manage power dissipation effectively. It has a low on - state resistance, which helps to minimize power losses during operation. This not only improves the overall efficiency of the system but also reduces the amount of heat generated.
- **Thermal Resistance**: The 1MBI400NN - 120 series features a low thermal resistance, enabling efficient heat transfer from the semiconductor devices to the heat sink. This is crucial for maintaining the optimal operating temperature of the module, as excessive heat can degrade performance and reduce the lifespan of the components.

### 2.3 Switching Characteristics
- **Fast Switching Speed**: The module offers fast switching times, which is essential for applications that require high - frequency operation. Fast switching reduces the time during which the device is in the transition state, minimizing power losses and improving the overall efficiency of the power conversion process.
- **Low Switching Losses**: Along with fast switching speed, the 1MBI400NN - 120 series has low switching losses. This is achieved through advanced semiconductor technology and optimized circuit design, resulting in a more energy - efficient operation.

## 3. Product Structure and Design

### 3.1 Semiconductor Devices
- The 1MBI400NN - 120 module typically consists of insulated gate bipolar transistors (IGBTs) and free - wheeling diodes. IGBTs combine the advantages of MOSFETs (Metal - Oxide - Semiconductor Field - Effect Transistors) and bipolar junction transistors (BJTs). They have a high input impedance like MOSFETs, which makes them easy to drive, and a low on - state voltage drop like BJTs, which results in low power losses.
- The free - wheeling diodes are used to provide a path for the inductive current when the IGBTs are turned off. This helps to protect the IGBTs from over - voltage spikes and ensures the smooth operation of the power circuit.

### 3.2 Packaging
- The module is housed in a robust and compact package. The package is designed to provide electrical insulation, mechanical protection, and efficient heat dissipation. It also allows for easy mounting on a heat sink, which is necessary for maintaining the proper operating temperature of the module.
- The package has well - defined terminals for easy connection to the external circuit. These terminals are designed to handle high currents and voltages, ensuring reliable electrical connections.

## 4. Applications

### 4.1 Motor Drives
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